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IDT7201LA80DB8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 80 ns | 10 MHz | 100 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 15 mA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP-28 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||||||||
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7201LA80DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 80 ns | 10 MHz | 100 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 900 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | 0.600 INCH, CERAMIC, DIP-28 | not_compliant | EAR99 | 8542.32.00.71 | CDIP | 28 | CD28 | 1988-01-01 | |||||
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7201LA80DB8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 80 ns | 10 MHz | 100 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 15 mA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP-28 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||||||||
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IDT7201LA80DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 80 ns | 10 MHz | 100 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 900 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP28,.6 | not_compliant | EAR99 | 8542.32.00.71 | DIP | 28 | 1988-01-01 | ||||||
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7201LA80DB
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 80 ns | 10 MHz | 100 ns | BI-DIRECTIONAL FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 900 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn63Pb37) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | RENESAS ELECTRONICS CORP | 0.600 INCH, CERAMIC, DIP-28 | not_compliant | NLR | 8542320071 | CDIP | 28 | CD28 | Renesas Electronics |