Filter Your Search
1 - 10 of 642 results
|
71V35761S166PFG
Integrated Device Technology Inc
|
$4.0018 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.5 ns | 166 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 320 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, GREEN, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | |||
|
71V3576S150PFGI
Integrated Device Technology Inc
|
$4.5314 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.8 ns | 150 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 35 mA | 3.14 V | 260 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-F100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFF | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | MATTE TIN | FLAT | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 20 X 14 MM, ROHS COMPLIANT, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | ||
|
71V3576S133PFG
Integrated Device Technology Inc
|
$4.5838 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 4.2 ns | 133 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-F100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFF | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | MATTE TIN | FLAT | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 20 X 14 MM, ROHS COMPLIANT, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | |||
|
71V35761SA166BQGI
Integrated Device Technology Inc
|
$7.7007 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.5 ns | 166 MHz | STANDARD SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 35 mA | 3.14 V | 330 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | FPBGA-165 | 165 | BQG165 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | |||||
|
71V35761S200BGI8
Integrated Device Technology Inc
|
Check for Price | No | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.1 ns | CACHE SRAM | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, POWER, PLASTIC, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
|
71V3576SA150BG8
Integrated Device Technology Inc
|
Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.8 ns | 150 MHz | STANDARD SRAM | COMMON | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 295 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
|
IDT71V35761SA183BGI
Integrated Device Technology Inc
|
Check for Price | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.3 ns | 183 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 35 mA | 3.14 V | 350 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | ||||
|
IDT71V3576SA150BG
Integrated Device Technology Inc
|
Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.8 ns | 150 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 295 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA-119 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||
|
71V35761YSA200BQ
Integrated Device Technology Inc
|
Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.1 ns | 200 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 360 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 225 | 30 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | FBGA-165 | 165 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||
|
IDT71V3576YSA133BGGI
Integrated Device Technology Inc
|
Check for Price | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, | 119 | unknown | 3A991.B.2.A | 8542.32.00.41 |