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IDT71V65903S80PFGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 3.14 V | 60 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT71V65903S80PFG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V65903S80PFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | TQFP-100 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | PKG100 | |||||||||||||||
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71V65903S80PFG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | TQFP-100 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | PKG100 | ||||||||||||||||
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71V65903S80PFGI8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | QUAD | RENESAS ELECTRONICS CORP | TQFP | 100 | compliant | NLR | 8542320041 | PKG100 | Renesas Electronics | |||||||||||||||
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IDT71V65903S80PFG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V65903S80PFG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | TQFP-100 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | PKG100 | ||||||||||||||||
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IDT71V65903S80PFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 3.14 V | 60 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71V65903S80PFG
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | QUAD | RENESAS ELECTRONICS CORP | TQFP | 100 | compliant | NLR | 8542320041 | PKG100 | Renesas Electronics | ||||||||||||||||
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71V65903S80PFGI
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Active | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | QUAD | RENESAS ELECTRONICS CORP | TQFP | 100 | compliant | NLR | 8542320041 | PKG100 | Renesas Electronics |