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IDT7164S55DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 55 ns | STANDARD SRAM | COMMON | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 160 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 225 | MIL-STD-883 Class B | 20 | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP28,.6 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | |||||
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7164S55DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 55 ns | STANDARD SRAM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 160 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | DIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | CD28 | ||||||||||
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7164S55DB
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 55 ns | STANDARD SRAM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 160 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn63Pb37) | THROUGH-HOLE | 2.54 mm | DUAL | RENESAS ELECTRONICS CORP | CDIP | DIP-28 | 28 | not_compliant | 3A001A2C | 8542320041 | CD28 | Renesas Electronics |