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71342LA35JI8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 250 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e0 | 1 | 85 °C | -40 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | QCCJ, LDCC52,.8SQ | not_compliant | EAR99 | 8542.32.00.41 | ||||||||||
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71342LA35JI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 250 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e0 | 1 | 85 °C | -40 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | QCCJ, LDCC52,.8SQ | not_compliant | EAR99 | 8542.32.00.41 | LCC | 52 | |||||
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IDT71342LA35JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 70 °C | 52 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | QCCJ, | compliant | EAR99 | 8542.32.00.41 | LCC | 52 | |||||||||||
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IDT71342LA35JI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2 V | 250 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e0 | 1 | 85 °C | -40 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLASTIC, LCC-52 | not_compliant | EAR99 | 8542.32.00.41 | LCC | 52 | |||||
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71342LA35JG8
Integrated Device Technology Inc
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Check for Price | Yes | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 200 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-N52 | Not Qualified | 70 °C | 52 | PLASTIC/EPOXY | QCCN | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | NO LEAD | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | QCCN, LDCC52,.8SQ | compliant | EAR99 | 8542.32.00.41 | |||||||||||||||||
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IDT71342LA35J8
Integrated Device Technology Inc
|
Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLASTIC, LCC-52 | not_compliant | EAR99 | 8542.32.00.41 | LCC | 52 | ||||
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IDT71342LA35J
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Tin/Lead (Sn85Pb15) | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLASTIC, LCC-52 | not_compliant | EAR99 | 8542.32.00.41 | LCC | 52 | ||||
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71342LA35J8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLASTIC, LCC-52 | compliant | EAR99 | 8542.32.00.41 | PLCC | 52 | PL52 | ||||
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IDT71342LA35JGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | 1 | 4000 | 4.096 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 85 °C | -40 °C | 52 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLASTIC, LCC-52 | compliant | EAR99 | 8542.32.00.41 | LCC | 52 | |||||||||||||||
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71342LA35JG
Integrated Device Technology Inc
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Check for Price | Yes | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 200 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-N52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCN | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | NO LEAD | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | QCCN, LDCC52,.8SQ | compliant | EAR99 | 8542.32.00.41 |