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7132LA35L48B
Integrated Device Technology Inc
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7132LA35L48B
Renesas Electronics Corporation
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IDT7132LA35L48B
Integrated Device Technology Inc
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| Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Access Time-Max
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Memory IC Type
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Additional Feature
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I/O Type
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Number of Functions | Number of Ports | Number of Words Code | Number of Words |
Operating Mode
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Output Characteristics
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Parallel/Serial
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Standby Current-Max
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Standby Voltage-Min
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Screening Level
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Manufacturer Package Code
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Reach Compliance Code
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ECCN Code
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HTS Code
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Date Of Intro
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Samacsys Manufacturer
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| No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N48 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-PRF-38535 | 48 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.016 mm | QUAD | 3.048 mm | 14.3002 mm | 14.3002 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | 0.570 X 0.570 INCH, 0.680 INCH HEIGHT, LCC-48 | 48 | LC48 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | ||
| No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N48 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-PRF-38535 | 48 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.016 mm | QUAD | 3.048 mm | 14.3002 mm | 14.3002 mm | RENESAS ELECTRONICS CORP | LCC | 48 | LC48 | unknown | 3A001A2C | 8542320041 | Renesas Electronics | |||
| No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N48 | Not Qualified | e0 | 125 °C | -55 °C | MIL-PRF-38535 | 48 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.016 mm | QUAD | 3.048 mm | 14.3002 mm | 14.3002 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCN, LCC48,.56SQ,40 | 48 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 |
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7132LA35L48B
Integrated Device Technology Inc
|
Check for Price Buy | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N48 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-PRF-38535 | 48 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.016 mm | QUAD | 3.048 mm | 14.3002 mm | 14.3002 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | 0.570 X 0.570 INCH, 0.680 INCH HEIGHT, LCC-48 | 48 | LC48 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | |||
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7132LA35L48B
Renesas Electronics Corporation
|
Check for Price Buy | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N48 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-PRF-38535 | 48 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.016 mm | QUAD | 3.048 mm | 14.3002 mm | 14.3002 mm | RENESAS ELECTRONICS CORP | LCC | 48 | LC48 | unknown | 3A001A2C | 8542320041 | Renesas Electronics | ||||
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IDT7132LA35L48B
Integrated Device Technology Inc
|
Check for Price Buy | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N48 | Not Qualified | e0 | 125 °C | -55 °C | MIL-PRF-38535 | 48 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.016 mm | QUAD | 3.048 mm | 14.3002 mm | 14.3002 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCN, LCC48,.56SQ,40 | 48 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 |