Findchips: Parametric Search Results for 71256S70DB


Select Parts		Part Number

		71256S70DB Integrated Device Technology Inc
		71256S70DB Renesas Electronics Corporation
		IDT71256S70DB Integrated Device Technology Inc

				Most Relevant					Technical																	Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Output Enable	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	HTS Code	Date Of Intro	Samacsys Manufacturer

$21.1208

Transferred

262.144 kbit

32KX8

5 V

70 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

135 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.211 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

0.600 INCH, CERAMIC, DIP-28

CD28

not_compliant

3A001.A.2.C

8542.32.00.41

1988-01-01

Check for Price

Obsolete

262.144 kbit

32KX8

5 V

70 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

YES

PARALLEL

20 mA

4.5 V

135 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn63Pb37)

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.211 mm

15.24 mm

RENESAS ELECTRONICS CORP

CDIP

DIP-28

CD28

not_compliant

3A001A2C

8542320041

Renesas Electronics

Check for Price

Transferred

262.144 kbit

32KX8

5 V

70 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

20 mA

4.5 V

135 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883 Class B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.211 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP, DIP28,.6

not_compliant

3A001.A.2.C

8542.32.00.41

1988-01-01

Compare

71256S70DB

Integrated Device Technology Inc

$21.1208

Transferred

262.144 kbit

32KX8

5 V

70 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

135 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.211 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

0.600 INCH, CERAMIC, DIP-28

CD28

not_compliant

3A001.A.2.C

8542.32.00.41

1988-01-01

71256S70DB

Renesas Electronics Corporation

Check for Price

Obsolete

262.144 kbit

32KX8

5 V

70 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

YES

PARALLEL

20 mA

4.5 V

135 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn63Pb37)

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.211 mm

15.24 mm

RENESAS ELECTRONICS CORP

CDIP

DIP-28

CD28

not_compliant

3A001A2C

8542320041

Renesas Electronics

IDT71256S70DB

Integrated Device Technology Inc

Check for Price

Transferred

262.144 kbit

32KX8

5 V

70 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

20 mA

4.5 V

135 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883 Class B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.211 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP, DIP28,.6

not_compliant

3A001.A.2.C

8542.32.00.41

1988-01-01

Parametric results for: 71256S70DB under SRAMs