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71322S55CB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 55 ns | MULTI-PORT SRAM | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | CMOS | MILITARY | R-XDIP-T48 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 48 | CERAMIC | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||||
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IDT71322S70L52B
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N52 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 52 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC52,.75SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.2098 mm | 19.05 mm | 19.05 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | LCC | HERMETIC SEALED, LCC-52 | 52 | ||||||
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IDT71322L70J
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | LCC | PLASTIC, LCC-52 | 52 | |||||
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71322S35J
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Tin/Lead (Sn85Pb15) | J BEND | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | PLASTIC, LCC-52 | ||||||||||
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IDT71322S50C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 50 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CDIP-T48 | Not Qualified | e0 | 70 °C | 48 | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 60.96 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.41 | DIP | DIP, | 48 | ||||||||||||
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IDT71322S50L52
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 50 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-CQCC-N52 | Not Qualified | e0 | 70 °C | 52 | CERAMIC, METAL-SEALED COFIRED | QCCN | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.2098 mm | 19.05 mm | 19.05 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.41 | LCC | QCCN, | 52 | ||||||||||||
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IDT71322L50L52B
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 50 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N52 | Not Qualified | e0 | 125 °C | -55 °C | 52 | CERAMIC, METAL-SEALED COFIRED | QCCN | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.2098 mm | 19.05 mm | 19.05 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | 3A001.A.2.C | 8542.32.00.41 | LCC | QCCN, | 52 | |||||||||||
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71322L45L48B
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 45 ns | MULTI-PORT SRAM | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | CMOS | MILITARY | S-XQCC-N48 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 48 | CERAMIC | QCCN | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||||
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71322L45L52B
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 45 ns | MULTI-PORT SRAM | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | S-XQCC-N52 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 52 | UNSPECIFIED | QCCN | LCC52,.75SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | LCC-52 | |||||||||||
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IDT71322S50L52B
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 50 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N52 | Not Qualified | e0 | 125 °C | -55 °C | 52 | CERAMIC, METAL-SEALED COFIRED | QCCN | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.2098 mm | 19.05 mm | 19.05 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | 3A001.A.2.C | 8542.32.00.41 | LCC | QCCN, | 52 |