Parametric results for: 70V657S10DRG8 under SRAMs

All Filters Access Time-Max JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 2

2 hits Apply

S-PQFP-G208 2

2 hits Apply

e3 2

2 hits Apply

28 mm 2

2 hits Apply

Manufacturer (2)

Integrated Device Technology Inc 1 Renesas Electronics Corporation 1

2 hits Apply

Memory Density (1)

1.1796 Mbit 2

2 hits Apply

MULTI-PORT SRAM 2

2 hits Apply

Memory Width (1)

36 2

2 hits Apply

3 2

2 hits Apply

1.0 2

2 hits Apply

208 2

2 hits Apply

32.768 k 2

2 hits Apply

32000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

32KX36 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

FQFP 2

2 hits Apply

SQUARE 2

2 hits Apply

FLATPACK, FINE PITCH 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply