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70V3579S5BCI8
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 1.1796 Mbit | 36 | 32KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | RENESAS ELECTRONICS CORP | CABGA | 256 | BC256 | not_compliant | NLR | 8542320041 | Renesas Electronics | ||||
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70V3579S5BCI
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 1.1796 Mbit | 36 | 32KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | RENESAS ELECTRONICS CORP | CABGA | 256 | BC256 | not_compliant | NLR | 8542320041 | Renesas Electronics | ||||
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IDT70V3579S5BCI
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 1.1796 Mbit | 36 | 32KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | LBGA, BGA256,16X16,40 | 1998-12-01 | ||||
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IDT70V3579S5BCI8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 1.1796 Mbit | 36 | 32KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | LBGA, BGA256,16X16,40 | 1998-12-01 | ||||
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70V3579S5BCI8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 1.1796 Mbit | 36 | 32KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 256 | BC256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | BGA-256 | 1998-12-01 | |||
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70V3579S5BCI
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 1.1796 Mbit | 36 | 32KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 256 | BC256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | BGA-256 | 1998-12-01 |