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70V3569S5BC
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.15 V | 360 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | BGA | BGA256,16X16,40 | SQUARE | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 17 X 17 MM, 1.40 MM, 1 MM PITCH, BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.B | 8542.32.00.41 | 1999-01-01 | |||||||
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70V3569S5BCI
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.B | 8542.32.00.41 | 1999-01-01 | ||||
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70V3569S5BCI8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.B | 8542.32.00.41 | 1999-01-01 | ||||
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IDT70V3569S5BCG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.15 V | 360 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-CBGA-B256 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 256 | CERAMIC, METAL-SEALED COFIRED | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.7 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.B | 8542.32.00.41 | ||||||
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70V3569S5BCGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.7 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.B | 8542.32.00.41 | |||||
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IDT70V3569S5BCG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.15 V | 360 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.B | 8542.32.00.41 | ||||||
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70V3569S5BCI8
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.15 V | 415 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | RENESAS ELECTRONICS CORP | CABGA | 256 | BC256 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||||
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70V3569S5BCG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.15 V | 360 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.7 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | LBGA, BGA256,16X16,40 | compliant | 3A991.B.2.B | 8542.32.00.41 | ||||||||
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70V3569S5BC8
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.15 V | 360 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | RENESAS ELECTRONICS CORP | CABGA | 256 | BC256 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||||
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IDT70V3569S5BC8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 589.824 kbit | 36 | 16KX36 | 3.3 V | 5 ns | 100 MHz | MULTI-PORT SRAM | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.15 V | 360 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.B | 8542.32.00.41 | 1999-01-01 |