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70T3589S166BC8
Integrated Device Technology Inc
|
$71.9712 | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2.4 V | 450 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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70T3589S166BC
Integrated Device Technology Inc
|
$90.8033 | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2.4 V | 450 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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70T3589S166BCI
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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IDT70T3589S166BCGI
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | PIPELINED OR FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.7 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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IDT70T3589S166BCI
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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IDT70T3589S166BCG
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | PIPELINED OR FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2.4 V | 450 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.7 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT70T3589S166BCI8
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 12 ns | 166 MHz | MULTI-PORT SRAM | COMMON | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 85 °C | -40 °C | 256 | PLASTIC/EPOXY | BGA | BGA256,16X16,40 | SQUARE | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||
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IDT70T3589S166BC8
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2.4 V | 450 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT70T3589S166BCGI8
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 2.3593 Mbit | 36 | 64KX36 | 12 ns | 166 MHz | MULTI-PORT SRAM | COMMON | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 256 | PLASTIC/EPOXY | BGA | BGA256,16X16,40 | SQUARE | GRID ARRAY | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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IDT70T3589S166BC
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 2.3593 Mbit | 36 | 64KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2.4 V | 450 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 |