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1 - 10 of 15 results
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7016L25JGB
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 280 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J68 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | MIL-PRF-38535 | 30 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||
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7016L25JB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | APPLICATION SPECIFIC SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 280 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J68 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | MIL-PRF-38535 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | QCCJ, LDCC68,1.0SQ | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||||||||||
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7016L25JGI
Integrated Device Technology Inc
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Check for Price | Obsolete | DUAL-PORT SRAM | INTEGRATED DEVICE TECHNOLOGY INC | , | compliant | EAR99 | 8542.32.00.41 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT7016L25JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e3 | 70 °C | 68 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, | 68 | compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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IDT7016L25JB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 280 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J68 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | MIL-PRF-38535 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||
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7016L25J
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 mA | 4.5 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | PLASTIC, LCC-68 | 68 | not_compliant | EAR99 | 8542.32.00.41 | PL68 | |||||
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IDT7016L25JGB
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 280 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J68 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | MIL-PRF-38535 | 30 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||
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IDT7016L25J
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 4.5 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | PLASTIC, LCC-68 | 68 | not_compliant | EAR99 | 8542.32.00.41 | |||||
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7016L25J8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 mA | 4.5 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | PLASTIC, LCC-68 | 68 | not_compliant | EAR99 | 8542.32.00.41 | PL68 | |||||
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IDT7016L25JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 147.456 kbit | 9 | 16KX9 | 5 V | 25 ns | MULTI-PORT SRAM | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | COMMON | 1 | 2 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 4.5 V | 220 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | compliant | EAR99 | 8542.32.00.41 |