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IDT7005L20JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | compliant | EAR99 | 8542.32.00.41 | |||||||
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IDT7005L20JGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | DUAL-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J68 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 30 | 68 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, | 68 | compliant | EAR99 | 8542.32.00.41 | 1999-06-09 | ||||||||||||
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7005L20JGB
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 320 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J68 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||
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7005L20JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | LCC | 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, GREEN, PLASTIC, LCC-68 | 68 | compliant | EAR99 | 8542.32.00.41 | ||||||||||
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7005L20JGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J68 | e3 | 3 | 85 °C | -40 °C | 260 | 68 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | TIN | J BEND | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, GREEN, PLASTIC, LCC-68 | 68 | compliant | EAR99 | 8542.32.00.41 | 1992-01-01 | PLG68 | |||||||||||||||||
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IDT7005L20JB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 320 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J68 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.572 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 68 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||||||
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IDT7005L20J8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 1.5 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J68 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.572 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, PLASTIC, LCC-68 | 68 | not_compliant | EAR99 | 8542.32.00.41 | |||||
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7005L20JI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J68 | Not Qualified | e0 | 1 | 85 °C | -40 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | PLASTIC, LCC-68 | 68 | not_compliant | EAR99 | 8542.32.00.41 | PL68 | ||||
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IDT7005L20JI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J68 | Not Qualified | e0 | 1 | 85 °C | -40 °C | 225 | 20 | 68 | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 24.2062 mm | 24.2062 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | PLASTIC, LCC-68 | 68 | not_compliant | EAR99 | 8542.32.00.41 | |||||
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7005L20JGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | MULTI-PORT SRAM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J68 | e3 | 3 | 85 °C | -40 °C | 260 | 68 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | TIN | J BEND | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, GREEN, PLASTIC, LCC-68 | 68 | compliant | EAR99 | 8542.32.00.41 | 1992-01-01 | PLG68 |