Parametric results for: 6nm60n under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE ENERGY RATED 1

27 hits Apply

65.0 mJ 6 100.0 mJ 4 345.0 mJ 2 400.0 mJ 1 610.0 mJ 8

Min (mJ) - Max (mJ)

27 hits Apply

DRAIN 5 ISOLATED 4

27 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 22

27 hits Apply

DS Breakdown Voltage-Min (1)

600 V 22

27 hits Apply

Drain Current-Max (ID) (7)

1 A 1 2.7 A 1 4.6 A 5 20 A 9 21 A 4 29 A 5 45 A 1

Min (A) - Max (A)

27 hits Apply

Drain-source On Resistance-Max (6)

60 mΩ 1 105 mΩ 2 165 mΩ 8 175 mΩ 4 185 mΩ 1 920 mΩ 6

Min (Ω) - Max (Ω)

27 hits Apply

METAL-OXIDE SEMICONDUCTOR 26

27 hits Apply

TO-220AB 7 TO-247 5 TO-251 1 TO-262AA 1 TO-263AB 5

27 hits Apply

R-PSFM-T3 12 R-PSIP-T3 2 R-PSSO-G2 6 S-PDSO-N5 1 S-XQCC-N12 1

27 hits Apply

e3 14

27 hits Apply

Manufacturer (1)

STMicroelectronics 27

27 hits Apply

1 6

27 hits Apply

Number of Elements (1)

1 26

27 hits Apply

Number of Terminals (4)

12 1 2 6 3 14 5 1

27 hits Apply

ENHANCEMENT MODE 22

27 hits Apply

150.0 °C 23

27 hits Apply

PLASTIC/EPOXY 21 UNSPECIFIED 1

27 hits Apply

RECTANGULAR 20 SQUARE 2

27 hits Apply

CHIP CARRIER 1 FLANGE MOUNT 12 IN-LINE 2 SMALL OUTLINE 7

27 hits Apply

Active 5 Obsolete 22

27 hits Apply

Yes 1

27 hits Apply

245 4 NOT SPECIFIED 11

27 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 26

27 hits Apply

20 W 1 30 W 2 35 W 2 45 W 4 70 W 1 140 W 4 190 W 6 250 W 1 300 W 1

Min (W) - Max (W)

27 hits Apply

Surface Mount (2)

NO 17 YES 9

27 hits Apply