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6116SA150DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 90 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 32.004 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | DIP-24 | 24 | CD24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | ||||||
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IDT6116SA150DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 4.5 V | 90 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 32.004 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP24,.6 | 24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | ||||||
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6116SA150DB
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 25 mA | 4.5 V | 90 µA | 5.5 V | 4.5 V | CMOS | R-CDIP-T24 | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn63Pb37) | THROUGH-HOLE | 2.54 mm | DUAL | 2.9 mm | 32 mm | 15.24 mm | RENESAS ELECTRONICS CORP | CDIP | DIP-24 | 24 | CD24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 2020-07-21 | Renesas Electronics |