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6116LA90TDB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 90 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 300 µA | 2 V | 85 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T24 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.004 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | DIP-24 | 24 | SD24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | |||||
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IDT6116LA90TDB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 90 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 85 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.004 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP24,.3 | 24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | ||||||
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6116LA90TDB
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 90 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 25 mA | 2 V | 85 µA | 5.5 V | 4.5 V | CMOS | R-CDIP-T24 | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 3.54 mm | 32.51 mm | 7.62 mm | RENESAS ELECTRONICS CORP | CDIP | DIP-24 | 24 | SD24 | unknown | 3A001.A.2.C | 8542.32.00.41 | 2020-07-21 | Renesas Electronics |