Findchips: Parametric Search Results for 6116LA90DB


Select Parts		Part Number

		6116LA90DB Integrated Device Technology Inc
		6116LA90DB Renesas Electronics Corporation
		IDT6116LA90DB Integrated Device Technology Inc

				Most Relevant					Technical																	Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Output Enable	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	HTS Code	Date Of Intro	Samacsys Manufacturer

$13.1151

Transferred

16.384 kbit

2KX8

5 V

90 ns

STANDARD SRAM

COMMON

2000

2.048 k

ASYNCHRONOUS

3-STATE

PARALLEL

300 µA

2 V

85 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

Not Qualified

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

4.826 mm

32.004 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

DIP, DIP24,.6

CD24

not_compliant

3A001.A.2.C

8542.32.00.41

1986-09-17

Check for Price

Obsolete

16.384 kbit

2KX8

5 V

90 ns

STANDARD SRAM

COMMON

2000

2.048 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

25 mA

2 V

85 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

2.9 mm

32 mm

15.24 mm

RENESAS ELECTRONICS CORP

CDIP

CD24

not_compliant

3A001.A.2.C

8542.32.00.41

2020-07-21

Renesas Electronics

Check for Price

Transferred

16.384 kbit

2KX8

5 V

90 ns

STANDARD SRAM

COMMON

2000

2.048 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

200 µA

2 V

85 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

125 °C

-55 °C

MIL-STD-883 Class B

CERAMIC, GLASS-SEALED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

4.826 mm

32.004 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP, DIP24,.6

not_compliant

3A001.A.2.C

8542.32.00.41

1986-09-17

Compare

6116LA90DB

Integrated Device Technology Inc

$13.1151

Transferred

16.384 kbit

2KX8

5 V

90 ns

STANDARD SRAM

COMMON

2000

2.048 k

ASYNCHRONOUS

3-STATE

PARALLEL

300 µA

2 V

85 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

Not Qualified

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

4.826 mm

32.004 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

DIP, DIP24,.6

CD24

not_compliant

3A001.A.2.C

8542.32.00.41

1986-09-17

6116LA90DB

Renesas Electronics Corporation

Check for Price

Obsolete

16.384 kbit

2KX8

5 V

90 ns

STANDARD SRAM

COMMON

2000

2.048 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

25 mA

2 V

85 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

2.9 mm

32 mm

15.24 mm

RENESAS ELECTRONICS CORP

CDIP

CD24

not_compliant

3A001.A.2.C

8542.32.00.41

2020-07-21

Renesas Electronics

IDT6116LA90DB

Integrated Device Technology Inc

Check for Price

Transferred

16.384 kbit

2KX8

5 V

90 ns

STANDARD SRAM

COMMON

2000

2.048 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

200 µA

2 V

85 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

125 °C

-55 °C

MIL-STD-883 Class B

CERAMIC, GLASS-SEALED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

4.826 mm

32.004 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP, DIP24,.6

not_compliant

3A001.A.2.C

8542.32.00.41

1986-09-17

Parametric results for: 6116LA90DB under SRAMs