Parametric results for: 60N120D1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 1

16 hits Apply

120.0 mJ 2 128.0 mJ 6

Min (mJ) - Max (mJ)

16 hits Apply

DRAIN 5

16 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

16 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 10

16 hits Apply

Drain Current-Max (ID) (4)

17 A 4 17.3 A 2 19.5 A 2 36 A 2

Min (A) - Max (A)

16 hits Apply

Drain-source On Resistance-Max (2)

78 mΩ 2 224 mΩ 8

Min (Ω) - Max (Ω)

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

16 hits Apply

2.8 pF 2 4.3 pF 2 5 pF 3 5.87 pF 1

Min (pF) - Max (pF)

16 hits Apply

TO-247 6 TO-263CB 2

16 hits Apply

R-PSFM-T3 4 R-PSFM-T4 2 R-PSSO-G7 2 R-XUUC-N3 2

16 hits Apply

e3 6

16 hits Apply

Manufacturer (3)

onsemi 8 STMicroelectronics 6 Toshiba America Electronic Components 2

16 hits Apply

1 2

16 hits Apply

Number of Elements (1)

1 10

16 hits Apply

Number of Terminals (3)

3 6 4 2 7 2

16 hits Apply

ENHANCEMENT MODE 10

16 hits Apply

175.0 °C 10

16 hits Apply

-55.0 °C 8

16 hits Apply

PLASTIC/EPOXY 8 UNSPECIFIED 2

16 hits Apply

RECTANGULAR 10

16 hits Apply

FLANGE MOUNT 6 SMALL OUTLINE 2 UNCASED CHIP 2

16 hits Apply

Active 14 Obsolete 2

16 hits Apply

Yes 8

16 hits Apply

245 2 NOT SPECIFIED 8

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

16 hits Apply

111 W 2 119 W 4 136 W 2 170 W 2

Min (W) - Max (W)

16 hits Apply

Surface Mount (2)

NO 6 YES 4

16 hits Apply