Parametric results for: 5n/600 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

6 hits Apply

Drain Current-Max (ID) (1)

20 A 3

6 hits Apply

Drain-source On Resistance-Max (1)

380 mΩ 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

6 hits Apply

R-PSFM-T3 3

6 hits Apply

e0 1 e2 1

6 hits Apply

Manufacturer (3)

Hitachi Ltd 1 Rectron Semiconductor 3 Renesas Electronics Corporation 2

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 3

6 hits Apply

Number of Terminals (1)

3 3

6 hits Apply

ENHANCEMENT MODE 2

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

FLANGE MOUNT 3

6 hits Apply

Active 3 Not Recommended 2 Transferred 1

6 hits Apply

No 1 Yes 1

6 hits Apply

260 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

6 hits Apply

150 W 3

6 hits Apply

Surface Mount (1)

NO 3

6 hits Apply