Parametric results for: 5N70Z under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

100.0 mJ 10

22 hits Apply

ISOLATED 6

22 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

22 hits Apply

DS Breakdown Voltage-Min (1)

700 V 10

22 hits Apply

Drain Current-Max (ID) (1)

5 A 10

22 hits Apply

Drain-source On Resistance-Max (1)

2.5 Ω 10

22 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

22 hits Apply

12 pF 10

22 hits Apply

TO-220AB 6 TO-251 2 TO-252 2

22 hits Apply

R-PSFM-T3 6 R-PSIP-T3 2 R-PSSO-G2 2

22 hits Apply

Manufacturer (2)

Solid State Devices Inc (SSDI) 12 Unisonic Technologies Co Ltd 10

22 hits Apply

Number of Elements (1)

1 10

22 hits Apply

Number of Terminals (2)

2 2 3 8

22 hits Apply

ENHANCEMENT MODE 10

22 hits Apply

150.0 °C 10

22 hits Apply

-55.0 °C 10

22 hits Apply

PLASTIC/EPOXY 10

22 hits Apply

RECTANGULAR 10

22 hits Apply

FLANGE MOUNT 6 IN-LINE 2 SMALL OUTLINE 2

22 hits Apply

Active 22

22 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

22 hits Apply

28 W 4 36 W 6

Min (W) - Max (W)

22 hits Apply

Surface Mount (2)

NO 8 YES 2

22 hits Apply