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Parametric » Memory » OTP ROMs

Parametric results for: 5962-9316603MXA under OTP ROMs

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Select Parts		Part Number

		5962-9316603MXA QP Semiconductor
		5962-9316603MXA Teledyne e2v
		5962-9316603MXA Cypress Semiconductor

		Most Relevant					Technical																Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Transferred

262.144 kbit

8

32KX8

5 V

35 ns

OTP ROM

POWER SWITCHED PROM

1

32000

32.768 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

28

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.0205 mm

7.62 mm

QP SEMICONDUCTOR INC

DIP

DIP,

28

unknown

EAR99

8542.32.00.71

Check for Price

Active

262.144 kbit

8

32KX8

5 V

35 ns

OTP ROM

POWER SWITCHED PROM

COMMON

1

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

13 V

40 mA

130 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Qualified

e0

125 °C

-55 °C

MIL-STD-883

28

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.0205 mm

7.62 mm

TELEDYNE E2V (UK) LTD

DIP

DIP, DIP28,.3

28

compliant

EAR99

8542.32.00.71

Check for Price

Obsolete

262.144 kbit

8

32KX8

5 V

35 ns

OTP ROM

POWER SWITCHED PROM

1

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

28

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.0205 mm

7.62 mm

CYPRESS SEMICONDUCTOR CORP

DIP

DIP,

28

unknown

EAR99

8542.32.00.71

Compare

5962-9316603MXA

QP Semiconductor

Check for Price

Transferred

262.144 kbit

8

32KX8

5 V

35 ns

OTP ROM

POWER SWITCHED PROM

1

32000

32.768 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

28

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.0205 mm

7.62 mm

QP SEMICONDUCTOR INC

DIP

DIP,

28

unknown

EAR99

8542.32.00.71

5962-9316603MXA

Teledyne e2v

Check for Price

Active

262.144 kbit

8

32KX8

5 V

35 ns

OTP ROM

POWER SWITCHED PROM

COMMON

1

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

13 V

40 mA

130 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Qualified

e0

125 °C

-55 °C

MIL-STD-883

28

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.0205 mm

7.62 mm

TELEDYNE E2V (UK) LTD

DIP

DIP, DIP28,.3

28

compliant

EAR99

8542.32.00.71

5962-9316603MXA

Cypress Semiconductor

Check for Price

Obsolete

262.144 kbit

8

32KX8

5 V

35 ns

OTP ROM

POWER SWITCHED PROM

1

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

28

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.0205 mm

7.62 mm

CYPRESS SEMICONDUCTOR CORP

DIP

DIP,

28

unknown

EAR99

8542.32.00.71