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5962-9167703MYA
QP Semiconductor
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Check for Price | Transferred | 73.728 kbit | 9 | 8KX9 | 5 V | 30 ns | 40 ns | RETRANSMIT | 1 | 8000 | 8.192 k | ASYNCHRONOUS | NO | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | QP SEMICONDUCTOR INC | DIP-28 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||
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5962-9167703MYA
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 73.728 kbit | 9 | 8KX9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 12 mA | 225 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | RENESAS ELECTRONICS CORP | 0.300 INCH, THIN, CERAMIC, DIP-28 | not_compliant | NLR | 8542320071 | CDIP | 28 | SD28 | Renesas Electronics | ||||
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5962-9167703MYA
Teledyne e2v
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Check for Price | No | Active | 73.728 kbit | 9 | 8KX9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 8000 | 8.192 k | ASYNCHRONOUS | NO | PARALLEL | 12 mA | 225 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | TELEDYNE E2V (UK) LTD | DIP-28 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||||||
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5962-9167703MYA
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 73.728 kbit | 9 | 8KX9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 12 mA | 225 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | 0.300 INCH, THIN, CERAMIC, DIP-28 | not_compliant | EAR99 | 8542.32.00.71 | CDIP | 28 | SD28 | 1994-01-01 | ||||
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5962-9167703MYA
Defense Logistics Agency
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Check for Price | Active | 73.728 kbit | 9 | 8KX9 | 5 V | 30 ns | 40 ns | RETRANSMIT | 1 | 8000 | 8.192 k | ASYNCHRONOUS | NO | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | DEFENSE LOGISTICS AGENCY | DIP-28 | unknown |