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Parametric » Memory » OTP ROMs

Parametric results for: 5962-9080306MLA under OTP ROMs

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Select Parts		Part Number

		5962-9080306MLA QP Semiconductor
		5962-9080306MLA Cypress Semiconductor
		5962-9080306MLA Teledyne e2v

		Most Relevant					Technical														Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

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Transferred

65.536 kbit

8

8KX8

5 V

45 ns

OTP ROM

1

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

31.877 mm

7.62 mm

QP SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

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Obsolete

65.536 kbit

8

8KX8

5 V

45 ns

OTP ROM

1

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

120 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

31.877 mm

7.62 mm

CYPRESS SEMICONDUCTOR CORP

DIP,

unknown

EAR99

8542.32.00.71

DIP

24

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Active

65.536 kbit

8

8KX8

5 V

45 ns

OTP ROM

COMMON

1

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

30 mA

120 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Qualified

e0

125 °C

-55 °C

38535Q/M;38534H;883B

24

CERAMIC, GLASS-SEALED

DIP

DIP24,.3

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

31.877 mm

7.62 mm

TELEDYNE E2V (UK) LTD

DIP, DIP24,.3

compliant

EAR99

8542.32.00.71

Compare

5962-9080306MLA

QP Semiconductor

Check for Price

Transferred

65.536 kbit

8

8KX8

5 V

45 ns

OTP ROM

1

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

31.877 mm

7.62 mm

QP SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

5962-9080306MLA

Cypress Semiconductor

Check for Price

Obsolete

65.536 kbit

8

8KX8

5 V

45 ns

OTP ROM

1

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

120 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

31.877 mm

7.62 mm

CYPRESS SEMICONDUCTOR CORP

DIP,

unknown

EAR99

8542.32.00.71

DIP

24

5962-9080306MLA

Teledyne e2v

Check for Price

Active

65.536 kbit

8

8KX8

5 V

45 ns

OTP ROM

COMMON

1

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

30 mA

120 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Qualified

e0

125 °C

-55 °C

38535Q/M;38534H;883B

24

CERAMIC, GLASS-SEALED

DIP

DIP24,.3

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

31.877 mm

7.62 mm

TELEDYNE E2V (UK) LTD

DIP, DIP24,.3

compliant

EAR99

8542.32.00.71