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Parametric » Memory » OTP ROMs

Parametric results for: 5962-8873404JA under OTP ROMs

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Select Parts		Part Number

		5962-8873404JA QP Semiconductor
		5962-8873404JA Cypress Semiconductor
		5962-8873404JA Teledyne e2v

		Most Relevant					Technical															Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Transferred

16.384 kbit

8

2KX8

5 V

25 ns

OTP ROM

1

2000

2.048 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

31.877 mm

15.24 mm

QP SEMICONDUCTOR INC

DIP

DIP,

24

unknown

EAR99

8542.32.00.71

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Obsolete

16.384 kbit

8

2KX8

5 V

25 ns

OTP ROM

1

2000

2.048 k

ASYNCHRONOUS

3-STATE

PARALLEL

90 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

31.877 mm

15.24 mm

CYPRESS SEMICONDUCTOR CORP

DIP

DIP,

24

unknown

EAR99

8542.32.00.71

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Active

16.384 kbit

8

2KX8

5 V

25 ns

OTP ROM

COMMON

1

2000

2.048 k

ASYNCHRONOUS

3-STATE

PARALLEL

12.5 V

120 mA

120 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Qualified

e0

125 °C

-55 °C

38535Q/M;38534H;883B

24

CERAMIC, GLASS-SEALED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

31.877 mm

15.24 mm

TELEDYNE E2V (UK) LTD

DIP, DIP24,.6

compliant

EAR99

8542.32.00.71

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QP Semiconductor

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Transferred

16.384 kbit

8

2KX8

5 V

25 ns

OTP ROM

1

2000

2.048 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

31.877 mm

15.24 mm

QP SEMICONDUCTOR INC

DIP

DIP,

24

unknown

EAR99

8542.32.00.71

Cypress Semiconductor

Check for Price

Obsolete

16.384 kbit

8

2KX8

5 V

25 ns

OTP ROM

1

2000

2.048 k

ASYNCHRONOUS

3-STATE

PARALLEL

90 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Not Qualified

e0

125 °C

-55 °C

24

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

31.877 mm

15.24 mm

CYPRESS SEMICONDUCTOR CORP

DIP

DIP,

24

unknown

EAR99

8542.32.00.71

Teledyne e2v

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Active

16.384 kbit

8

2KX8

5 V

25 ns

OTP ROM

COMMON

1

2000

2.048 k

ASYNCHRONOUS

3-STATE

PARALLEL

12.5 V

120 mA

120 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T24

Qualified

e0

125 °C

-55 °C

38535Q/M;38534H;883B

24

CERAMIC, GLASS-SEALED

DIP

DIP24,.6

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

31.877 mm

15.24 mm

TELEDYNE E2V (UK) LTD

DIP, DIP24,.6

compliant

EAR99

8542.32.00.71