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5962-8866201XA
Pyramid Semiconductor Corporation
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Check for Price | No | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 105 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | PERFORMANCE SEMICONDUCTOR CORP | DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 | ||||||||||||
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5962-8866201XA
Freescale Semiconductor
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 100 ns | STANDARD SRAM | COMMON | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 105 µA | CMOS | MILITARY | R-XDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | MOTOROLA SEMICONDUCTOR PRODUCTS | DIP, DIP28,.6 | unknown | |||||||||||||||||||
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5962-8866201XA
Motorola Semiconductor Products
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.34 mm | 35.56 mm | 15.24 mm | MOTOROLA INC | 0.600 INCH, CERAMIC, DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||||||||
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5962-8866201XA
Matra MHS
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Check for Price | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.34 mm | 35.56 mm | 15.24 mm | MATRA MHS | 0.600 INCH, CERAMIC, DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 | DIP | 28 | ||||||||||||||||||
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5962-8866201XA
Matra Design Semiconductor
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | COMMON | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 105 µA | CMOS | MILITARY | R-XDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) - hot dipped | THROUGH-HOLE | 2.54 mm | DUAL | MATRA DESIGN SEMICONDUCTOR | DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 | ||||||||||||||||||
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5962-8866201XA
Defense Logistics Agency
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Check for Price | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | DEFENSE LOGISTICS AGENCY | DIP-28 | unknown | ||||||||||||||||||||||
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5962-8866201XA
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 105 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 1 | 125 °C | -55 °C | 240 | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | RENESAS ELECTRONICS CORP | 0.600 INCH, CERDIP-28 | not_compliant | 3A001A2C | 8542320041 | CDIP | 28 | CD28 | Renesas Electronics | |||
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5962-8866201XA
Micross Components
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Check for Price | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 105 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.34 mm | 35.56 mm | 15.24 mm | AUSTIN SEMICONDUCTOR INC | 0.600 INCH, CERAMIC, DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 | DIP | 28 | |||||||||
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5962-8866201XA
e2v technologies
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Check for Price | No | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 105 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | TELEDYNE E2V (UK) LTD | DIP-28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||||||||||||
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5962-8866201XA
QP Semiconductor
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Check for Price | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 100 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | QP SEMICONDUCTOR INC | DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 |