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5962-8855213XA
e2v technologies
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Check for Price | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | TELEDYNE E2V (UK) LTD | DIP | DIP, DIP28,.6 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | ||
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5962-8855213XA
Micross Components
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Check for Price | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | MICROSS COMPONENTS | DIP | DIP, DIP28,.6 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | ||
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5962-8855213XA
QP Semiconductor
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Check for Price | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | QP SEMICONDUCTOR INC | DIP | DIP, | 28 | unknown | 3A001.A.2.C | 8542.32.00.41 | |||||||
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5962-8855213XA
Pyramid Semiconductor Corporation
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Check for Price | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | PYRAMID SEMICONDUCTOR CORP | DIP-28 | compliant | 3A001.A.2.C | 8542.32.00.41 |