Findchips: Parametric Search Results for 5962-8751422XA


Select Parts		Part Number

		5962-8751422XA Microchip Technology Inc
		5962-8751422XA Atmel Corporation
		5962-8751422XA Pyramid Semiconductor Corporation

				Most Relevant					Technical																				Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Command User Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Obsolete

65.536 kbit

8KX8

5 V

150 ns

EEPROM

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

10000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.72 mm

37.25 mm

15.24 mm

MICROCHIP TECHNOLOGY INC

DIP

DIP,

unknown

3A001.A.2.C

8542.32.00.51

Check for Price

Transferred

65.536 kbit

8KX8

5 V

150 ns

EEPROM

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

YES

10000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

150 µA

45 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.72 mm

37.25 mm

15.24 mm

ATMEL CORP

DIP

DIP, DIP28,.6

unknown

3A001.A.2.C

8542.32.00.51

Check for Price

Active

65.536 kbit

8KX8

5 V

150 ns

EEPROM

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

YES

10000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

150 µA

45 µA

5.5 V

4.5 V

CMOS

MILITARY

R-XDIP-T28

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

5.72 mm

37.25 mm

15.24 mm

PYRAMID SEMICONDUCTOR CORP

DIP

DIP, DIP28,.6

compliant

3A001.A.2.C

8542.32.00.51

Compare

5962-8751422XA

Microchip Technology Inc

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

150 ns

EEPROM

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

10000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.72 mm

37.25 mm

15.24 mm

MICROCHIP TECHNOLOGY INC

DIP

DIP,

unknown

3A001.A.2.C

8542.32.00.51

5962-8751422XA

Atmel Corporation

Check for Price

Transferred

65.536 kbit

8KX8

5 V

150 ns

EEPROM

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

YES

10000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

150 µA

45 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.72 mm

37.25 mm

15.24 mm

ATMEL CORP

DIP

DIP, DIP28,.6

unknown

3A001.A.2.C

8542.32.00.51

5962-8751422XA

Pyramid Semiconductor Corporation

Check for Price

Active

65.536 kbit

8KX8

5 V

150 ns

EEPROM

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

YES

10000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

150 µA

45 µA

5.5 V

4.5 V

CMOS

MILITARY

R-XDIP-T28

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

5.72 mm

37.25 mm

15.24 mm

PYRAMID SEMICONDUCTOR CORP

DIP

DIP, DIP28,.6

compliant

3A001.A.2.C

8542.32.00.51

Parametric results for: 5962-8751422XA under EEPROMs