Parametric results for: 53S281 under OTP ROMs

Filter Your Search

1 - 10 of 19 results

|
-
-
-
-
Manufacturer Part Number: 53s281
Select parts from the table below to compare.
Compare
Compare
53S281J883B
Monolithic Memories (RETIRED)
Check for Price No Obsolete 2.048 kbit 8 256X8 5 V OTP ROM 1 256 256 words ASYNCHRONOUS PARALLEL CMOS MILITARY R-GDIP-T20 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 20 CERAMIC, GLASS-SEALED DIP DIP20,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL MONOLITHIC MEMORIES unknown
53S281J
Monolithic Memories (RETIRED)
Check for Price No Obsolete 131.072 kbit 8 16KX8 5 V 200 ns OTP ROM 1 16000 256 words ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS MILITARY R-GDIP-T20 Not Qualified e0 125 °C -55 °C 20 CERAMIC, GLASS-SEALED DIP DIP20,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL MONOLITHIC MEMORIES unknown
53S281L883B
Monolithic Memories (RETIRED)
Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 150 ns OTP ROM 1 32000 256 words ASYNCHRONOUS PARALLEL 30 µA CMOS MILITARY S-MQCC-N20 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 20 METAL QCCN LCC20,.35SQ SQUARE CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD MONOLITHIC MEMORIES unknown
53S281J883B
AMD
Check for Price No Obsolete 2.048 kbit 8 256X8 5 V 50 ns OTP ROM 256 256 words TTL MILITARY R-XDIP-T20 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 20 CERAMIC DIP DIP20,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL ADVANCED MICRO DEVICES INC unknown DIP, DIP20,.3 EAR99 8542.32.00.71
53S281AL
Monolithic Memories (RETIRED)
Check for Price No Obsolete 524.288 kbit 8 64KX8 5 V 45 ns OTP ROM 1 64000 256 words ASYNCHRONOUS PARALLEL 30 µA CMOS MILITARY S-MQCC-N20 Not Qualified e0 125 °C -55 °C 20 METAL QCCN LCC20,.35SQ SQUARE CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD MONOLITHIC MEMORIES unknown
53S281L
Monolithic Memories (RETIRED)
Check for Price No Obsolete 16.384 kbit 8 2KX8 5 V 35 ns OTP ROM 1 2000 256 words ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS MILITARY S-MQCC-N20 Not Qualified e0 125 °C -55 °C 20 METAL QCCN LCC20,.35SQ SQUARE CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD MONOLITHIC MEMORIES unknown
53S281NL
AMD
Check for Price Obsolete 2.048 kbit 8 256X8 5 V 50 ns OTP ROM 1 256 256 words ASYNCHRONOUS 3-STATE PARALLEL 140 µA 5.5 V 4.5 V BIPOLAR MILITARY S-PQCC-J28 Not Qualified 125 °C -55 °C 28 PLASTIC/EPOXY QCCJ SQUARE CHIP CARRIER YES J BEND 1.27 mm QUAD 4.57 mm 11.5062 mm 11.5062 mm ADVANCED MICRO DEVICES INC unknown PLASTIC, LCC-28 EAR99 8542.32.00.71 QLCC 28
53S281W883B
Monolithic Memories (RETIRED)
Check for Price No Obsolete 524.288 kbit 8 64KX8 5 V 120 ns OTP ROM 1 64000 256 words ASYNCHRONOUS PARALLEL 30 µA CMOS MILITARY R-GDFP-F20 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 20 CERAMIC, GLASS-SEALED DFP FL20,.3 RECTANGULAR FLATPACK YES TIN LEAD FLAT 1.27 mm DUAL MONOLITHIC MEMORIES unknown
53S281AN
AMD
Check for Price Obsolete 2.048 kbit 8 256X8 5 V 40 ns OTP ROM 1 256 256 words ASYNCHRONOUS 3-STATE PARALLEL 140 µA 5.5 V 4.5 V BIPOLAR MILITARY R-PDIP-T24 Not Qualified 125 °C -55 °C 24 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.715 mm 32.004 mm 15.24 mm ADVANCED MICRO DEVICES INC unknown DIP, EAR99 8542.32.00.71 DIP 24
53S281AW883B
Monolithic Memories (RETIRED)
Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 60 ns OTP ROM 1 128000 256 words ASYNCHRONOUS PARALLEL 30 µA CMOS MILITARY R-GDFP-F20 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 20 CERAMIC, GLASS-SEALED DFP FL20,.3 RECTANGULAR FLATPACK YES TIN LEAD FLAT 1.27 mm DUAL MONOLITHIC MEMORIES unknown