Parametric results for: 4n1001 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 61 CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 96 HIGH RELIABILITY 48 HIGH VOLTAGE, HIGH RELIABILITY 1 MEGAFET 2

315 hits Apply

65.0 mJ 24 88.2 mJ 14 100.0 mJ 6 144.0 mJ 6 160.0 mJ 3 200.0 mJ 6 700.0 mJ 11 980.0 mJ 4 1500.0 mJ 3 2000.0 mJ 12 2500.0 mJ 4 3000.0 mJ 10 4000.0 mJ 7

Min (mJ) - Max (mJ)

315 hits Apply

DRAIN 49 ISOLATED 179

315 hits Apply

Configuration (3)

SINGLE 24 Single 2 SINGLE WITH BUILT-IN DIODE 274

315 hits Apply

DS Breakdown Voltage-Min (2)

40 V 1 1 kV 294

Min (V) - Max (V)

315 hits Apply

Drain Current-Max (Abs) (ID) (2)

4 A 1 14 A 1

Min (A) - Max (A)

315 hits Apply

Drain Current-Max (ID) (19)

1.4 A 6 2 A 1 2.2 A 2 2.5 A 2 3.5 A 1 4 A 212 4.3 A 10 9.5 A 2 14 A 14 18 A 1 22 A 5 24 A 12 30 A 4 34 A 1 37 A 2 38 A 1 44 A 3 74 A 1 100 A 1

Min (A) - Max (A)

315 hits Apply

Drain-source On Resistance-Max (25)

3.9 mΩ 2 7 mΩ 1 66 mΩ 1 220 mΩ 6 240 mΩ 2 245 mΩ 1 280 mΩ 4 390 mΩ 7 400 mΩ 2 420 mΩ 4 440 mΩ 4 490 mΩ 1 750 mΩ 12 800 mΩ 4 820 mΩ 7 950 mΩ 2 1 Ω 2 1.1 Ω 2 2 Ω 2 3 Ω 11 3.3 Ω 7 3.5 Ω 193 4 Ω 5 6 Ω 6 11 Ω 6

Min (Ω) - Max (Ω)

315 hits Apply

METAL-OXIDE SEMICONDUCTOR 300

315 hits Apply

2.2 pF 6 8.7 pF 14 9 pF 24 41 pF 1 48 pF 1 50 pF 4 60 pF 4 85 pF 3 315 pF 1

Min (pF) - Max (pF)

315 hits Apply

TO-204AA 2 TO-218 2 TO-220AB 44 TO-247 3 TO-247AD 9 TO-251 10 TO-252 6 TO-254AA 67 TO-263AB 13 TO-264AA 9 TO-268 1 TO-268AA 3

315 hits Apply

O-MBFM-P2 2 R-PDSO-G21 1 R-PSFM-T3 70 R-PSIP-T3 25 R-PSSO-G2 25 R-PUFM-X4 10 R-XUUC-N2 7 R-XUUC-N4 3 R-XUUC-N9 2 S-MSFM-P3 96 S-MSFM-T3 48

315 hits Apply

e0 17 e1 19 e3 30

315 hits Apply

Manufacturer (16)

Fairchild Semiconductor Corporation 3 Freescale Semiconductor 2 Harris Semiconductor 3 Intersil Corporation 3 IXYS Corporation 63 Littelfuse Inc 40 MERITEK Electronics Corporation 2 Motorola Mobility LLC 2 Motorola Semiconductor Products 2 New Jersey Semiconductor Products Inc 1 onsemi 1 Rochester Electronics LLC 1 Solitron Devices Inc 144 STMicroelectronics 3 Suzhou Good-Ark Electronics Co Ltd 1 Unisonic Technologies Co Ltd 44

315 hits Apply

1 21 NOT SPECIFIED 1

315 hits Apply

Number of Elements (1)

1 298

315 hits Apply

Number of Terminals (5)

2 34 21 1 3 239 4 13 9 2

315 hits Apply

ENHANCEMENT MODE 300

315 hits Apply

150.0 °C 274

315 hits Apply

-65.0 °C 4 -55.0 °C 26

Min (°C) - Max (°C)

315 hits Apply

METAL 146 PLASTIC/EPOXY 131 UNSPECIFIED 12

315 hits Apply

RECTANGULAR 143 ROUND 2 SQUARE 144

315 hits Apply

FLANGE MOUNT 226 IN-LINE 25 SMALL OUTLINE 26 UNCASED CHIP 12

315 hits Apply

Active 209 Not Recommended 13 Obsolete 51 Transferred 42

315 hits Apply

No 145 Yes 43

315 hits Apply

260 28 NOT SPECIFIED 179

315 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 300

315 hits Apply

35 W 1 40 W 1 70 W 2 100 W 144 125 W 1 150 W 1 300 W 2 360 W 2

Min (W) - Max (W)

315 hits Apply

23 W 6 35 W 1 38 W 12 40 W 3 46 W 1 57 W 2 58 W 16 63 W 6 70 W 3 100 W 48 125 W 8 135 W 1 140 W 6 150 W 16 160 W 2 200 W 2 300 W 6 357 W 2 360 W 3 400 W 1 500 W 2 550 W 1 560 W 2 568 W 2 580 W 2 600 W 2 694 W 1 890 W 2 960 W 1 1 kW 4 1.17 kW 1 1.25 kW 2 1.56 kW 1 2.41 kW 1

Min (W) - Max (W)

315 hits Apply

Surface Mount (2)

NO 256 YES 38

315 hits Apply