Parametric results for: 4ak20e under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2

14 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

14 hits Apply

Drain Current-Max (ID) (5)

1.5 A 2 3 A 2 5 A 5 8 A 2 10 A 2

Min (A) - Max (A)

14 hits Apply

Drain-source On Resistance-Max (6)

75 mΩ 1 125 mΩ 1 200 mΩ 2 350 mΩ 3 550 mΩ 1 650 mΩ 1

Min (Ω) - Max (Ω)

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

14 hits Apply

R-PSFM-T12 2 R-PSIP-T10 6 R-PSIP-T12 1

14 hits Apply

Manufacturer (2)

Hitachi Ltd 7 Renesas Electronics Corporation 7

14 hits Apply

Number of Elements (1)

4 2

14 hits Apply

Number of Terminals (2)

10 6 12 3

14 hits Apply

ENHANCEMENT MODE 7

14 hits Apply

150.0 °C 12

14 hits Apply

PLASTIC/EPOXY 9

14 hits Apply

RECTANGULAR 9

14 hits Apply

FLANGE MOUNT 2 IN-LINE 7

14 hits Apply

Obsolete 5 Transferred 9

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

14 hits Apply

4 W 2 24 W 2 28 W 7 32 W 1

Min (W) - Max (W)

14 hits Apply

Surface Mount (1)

NO 14

14 hits Apply