Parametric results for: 48F010K-30N under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

300 ns 2

2 hits Apply

1000 WRITE/ERASE CYCLES 1

2 hits Apply

NO 1

2 hits Apply

NO 1

2 hits Apply

1000.0 Write/Erase Cycles 1

2 hits Apply

R-PDIP-T32 2

2 hits Apply

e0 1

2 hits Apply

Manufacturer (2)

Philips Semiconductors 1 YAGEO Corporation 1

2 hits Apply

Memory Density (1)

1.0486 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 1

2 hits Apply

128 1

2 hits Apply

32 2

2 hits Apply

131.072 k 2

2 hits Apply

128000.0 2

2 hits Apply

ASYNCHRONOUS 1

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

128KX8 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

DIP 1

2 hits Apply

DIP32,.6 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Sector Size (1)

1K 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply