Parametric results for: 3n4x under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Functions Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

AVALANCHE RATED 2 FAST SWITCHING 17 IMPEDANCE TOL. 10%; MAX DISTORTION 10%; MAX ATTENUATION 1DB; MAX TEMP. COEFF. CAPTURED 6 LEADFORM OPTIONS ARE AVAILABLE 4

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45.0 mJ 1 46.0 mJ 7 52.0 mJ 3 100.0 mJ 1 120.0 mJ 27 160.0 mJ 16 290.0 mJ 18 507.0 mJ 8 666.0 mJ 3 705.0 mJ 5

Min (mJ) - Max (mJ)

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DRAIN 47 ISOLATED 33

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Collector Current-Max (IC) (2)

4 A 1 15 A 2

Min (A) - Max (A)

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Collector-Emitter Voltage-Max (1)

60 V 1

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Configuration (4)

SEPARATE, 2 ELEMENTS 4 SINGLE 26 Single 3 SINGLE WITH BUILT-IN DIODE 114

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DC Current Gain-Min (hFE) (2)

25.0 1 30.0 2

Min - Max

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DS Breakdown Voltage-Min (4)

30 V 4 400 V 99 450 V 12 4 kV 3

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (2)

3 A 2 13 A 1

Min (A) - Max (A)

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Drain Current-Max (ID) (22)

300 mA 1 600 mA 2 1.6 A 2 1.7 A 3 1.8 A 1 2 A 17 2.1 A 2 2.2 A 4 2.5 A 18 2.6 A 1 2.7 A 4 3 A 54 4 A 1 5 A 1 8 A 1 10 A 1 12.8 A 3 13 A 17 13.7 A 3 33 A 1 45 A 2 300 A 2

Min (A) - Max (A)

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Drain-source On Resistance-Max (19)

2.6 mΩ 1 23 mΩ 1 40 mΩ 1 70 mΩ 1 100 mΩ 1 160 mΩ 1 350 mΩ 13 370 mΩ 2 400 mΩ 5 1.6 Ω 4 2 Ω 30 2.6 Ω 3 3 Ω 6 3.3 Ω 5 3.4 Ω 27 3.5 Ω 11 3.8 Ω 3 290 Ω 2 300 Ω 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 144

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9 pF 14 40 pF 2 50 pF 2 60 pF 16 100 pF 2 200 pF 2

Min (pF) - Max (pF)

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TO-126 1 TO-204AA 4 TO-218AC 2 TO-220AB 46 TO-247 3 TO-251 12 TO-252 14 TO-252AA 3 TO-262AA 2 TO-263AB 4 TO-264AA 1 TO-92 1

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O-MBFM-P2 4 O-PBCY-T3 1 R-PDIP-T16 6 R-PDSO-G3 1 R-PDSO-G4 4 R-PDSO-G8 4 R-PSFM-T3 55 R-PSIP-T3 18 R-PSSO-G2 32

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e0 29 e1 2 e3 25

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Manufacturer (29)

Advanced Power Electronics Corp 12 Alpha & Omega Semiconductor 1 CHENMKO Enterprise Co Ltd 1 Esc Electronics Corp 6 Fairchild Semiconductor Corporation 19 Freescale Semiconductor 3 GPD Optoelectronics Corp 1 Harris Semiconductor 2 Intersil Corporation 2 IXYS Corporation 4 KEC 3 MagnaChip Semiconductor Ltd 3 MERITEK Electronics Corporation 3 Motorola Mobility LLC 3 Motorola Semiconductor Products 3 National Semiconductor Corporation 1 NXP Semiconductors 17 onsemi 7 Philips Semiconductors 8 Rectron Semiconductor 1 Renesas Electronics Corporation 3 Rochester Electronics LLC 7 Semiconductor Technology Inc 4 Semitronics Corp 1 Shindengen Electronic Manufacturing Co Ltd 4 STMicroelectronics 5 Texas Instruments 1 Thomson Consumer Electronics 2 Unisonic Technologies Co Ltd 68

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1 11 3 2 NOT APPLICABLE 2 NOT SPECIFIED 4

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Number of Elements (2)

1 140 2 4

Min - Max

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1.0 6

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Number of Terminals (5)

16 6 2 36 3 75 4 4 8 4

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ENHANCEMENT MODE 139

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100.0 °C 2 125.0 °C 6 150.0 °C 117

Min (°C) - Max (°C)

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-55.0 °C 6

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METAL 4 PLASTIC/EPOXY 121

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DIP 6

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RECTANGULAR 120 ROUND 5

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CYLINDRICAL 1 FLANGE MOUNT 59 IN-LINE 24 SMALL OUTLINE 41

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Active 96 Contact Manufacturer 17 End Of Life 2 Not Recommended 1 Obsolete 68 Transferred 11

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No 2 Yes 20

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250 2 260 9 265 1 NOT APPLICABLE 1 NOT SPECIFIED 80

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Polarity/Channel Type (2)

N-CHANNEL 144 PNP 3

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25 W 1 36 W 1 60 W 1 75 W 5 150 W 2

Min (W) - Max (W)

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2 W 3 2.5 W 1 3.3 W 1 20 W 1 25 W 16 26 W 4 27 W 1 30 W 11 34 W 6 42 W 1 45 W 2 50 W 21 54 W 2 55 W 5 60 W 3 70 W 1 75 W 16 94 W 2 130 W 2 143 W 2 150 W 3 156 W 6 416 W 1

Min (W) - Max (W)

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Surface Mount (2)

NO 104 YES 49

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Transition Frequency-Nom (fT) (1)

600 kHz 2

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