Parametric results for: 3SK299-U72 under RF Small Signal Field-Effect Transistors
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3SK299U72
Renesas Electronics Corporation
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | RENESAS ELECTRONICS CORP | SMALL OUTLINE, R-PDSO-G4 | 4 | unknown | EAR99 | |||||||||||
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3SK299-U72
NEC Electronics America Inc
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | Not Qualified | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NEC ELECTRONICS AMERICA INC | MINIMOLD PACKAGE-4 | unknown | EAR99 | ||||||||||
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3SK299-U72-A
NEC Compound Semiconductor Devices Ltd
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | e6 | Not Qualified | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN BISMUTH | GULL WING | DUAL | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | PLASTIC, SO-4 | compliant | EAR99 | |||||||
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3SK299-U72-A
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | e6 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN BISMUTH | GULL WING | DUAL | RENESAS ELECTRONICS CORP | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | SOT | |||||
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3SK299-U72-A
NEC Electronics Group
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | e6 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN BISMUTH | GULL WING | DUAL | NEC ELECTRONICS CORP | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | SOT | ||||||
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3SK299-U72
NEC Electronics Group
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | e0 | Not Qualified | 125 °C | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | NEC ELECTRONICS CORP | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | |||||
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3SK299-U72
NEC Compound Semiconductor Devices Ltd
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 16 dB | 40 mA | 0.03 pF | METAL SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | e0 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | PLASTIC, SO-4 | compliant | EAR99 |