Parametric results for: 3SK136 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 2

12 hits Apply

Configuration (1)

SINGLE 12

12 hits Apply

DS Breakdown Voltage-Min (1)

20 V 12

12 hits Apply

Drain Current-Max (ID) (1)

35 mA 12

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 2

12 hits Apply

R-PDSO-G4 12

12 hits Apply

e0 1

12 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 6

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

4 12

12 hits Apply

DUAL GATE, DEPLETION MODE 2 ENHANCEMENT MODE 10

12 hits Apply

125.0 °C 1

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

12 hits Apply

SMALL OUTLINE 12

12 hits Apply

Transferred 12

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

150 mW 1

12 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 2

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply