Parametric results for: 3SK134B under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

SOURCE 12

13 hits Apply

Configuration (1)

SINGLE 12

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DS Breakdown Voltage-Min (1)

18 V 3

13 hits Apply

Drain Current-Max (ID) (1)

25 mA 13

13 hits Apply

METAL SEMICONDUCTOR 1 METAL-OXIDE SEMICONDUCTOR 12

13 hits Apply

0.03 pF 12

13 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 12

13 hits Apply

R-PDSO-G4 12

13 hits Apply

Manufacturer (3)

NEC Electronics America Inc 4 NEC Electronics Group 5 Renesas Electronics Corporation 4

13 hits Apply

Number of Elements (1)

1 12

13 hits Apply

Number of Terminals (1)

4 12

13 hits Apply

DUAL GATE, DEPLETION MODE 9 DUAL GATE, ENHANCEMENT MODE 3

13 hits Apply

125.0 °C 4

13 hits Apply

PLASTIC/EPOXY 12

13 hits Apply

RECTANGULAR 12

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SMALL OUTLINE 12

13 hits Apply

Obsolete 13

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

200 mW 4

13 hits Apply

Power Gain-Min (Gp) (1)

20.0 dB 12

13 hits Apply

Surface Mount (1)

YES 12

13 hits Apply