Parametric results for: 3N201 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 1

11 hits Apply

SOURCE AND SUBSTRATE 4

11 hits Apply

Configuration (2)

SINGLE 7 Single 1

11 hits Apply

DS Breakdown Voltage-Min (1)

25 V 7

11 hits Apply

Drain Current-Max (Abs) (ID) (1)

50 mA 1

11 hits Apply

Drain Current-Max (ID) (1)

50 mA 7

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

0.03 pF 4

11 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 4

11 hits Apply

TO-72 4

11 hits Apply

O-MBCY-W4 4

11 hits Apply

e0 4

11 hits Apply

Manufacturer (7)

Advanced Semiconductor Inc 1 Digitron Semiconductors 3 Freescale Semiconductor 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 3 Solitron Devices Inc 1 Texas Instruments 1

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

4 4

11 hits Apply

DEPLETION MODE 3 DUAL GATE, DEPLETION MODE 1 ENHANCEMENT MODE 3

11 hits Apply

175.0 °C 3 200.0 °C 5

Min (°C) - Max (°C)

11 hits Apply

-65.0 °C 3

11 hits Apply

METAL 4

11 hits Apply

ROUND 4

11 hits Apply

CYLINDRICAL 4

11 hits Apply

Active 8 Obsolete 3

11 hits Apply

NOT SPECIFIED 3

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

360 mW 3

11 hits Apply

360 mW 5

11 hits Apply

Power Gain-Min (Gp) (1)

15.0 dB 4

11 hits Apply

Surface Mount (1)

NO 8

11 hits Apply