Parametric results for: 2sk43 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 12

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Configuration (2)

SINGLE 161 Single 3

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DS Breakdown Voltage-Min (3)

15 V 7 20 V 6 22 V 34

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

30 mA 3

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Drain Current-Max (ID) (4)

20 mA 25 30 mA 88 100 mA 34 3 A 5

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

250 Ω 1

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JUNCTION 136 METAL-OXIDE SEMICONDUCTOR 37

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4 pF 26

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Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 31

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TO-236 27 TO-92 43

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O-PBCY-T3 29 O-PBCY-W3 14 R-PDSO-G3 88 R-PSIP-T3 22 R-PSIP-W3 12

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e0 14 e2 1

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Manufacturer (6)

Hitachi Ltd 71 Isahaya Electronics Corporation 4 Mitsubishi Electric 9 onsemi 7 Renesas Electronics Corporation 68 SANYO Electric Co Ltd 26

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1 2

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Number of Elements (1)

1 161

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Number of Terminals (1)

3 165

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DEPLETION MODE 128 ENHANCEMENT MODE 27

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125.0 °C 15 150.0 °C 37

Min (°C) - Max (°C)

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PLASTIC/EPOXY 165

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RECTANGULAR 122 ROUND 43

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CYLINDRICAL 43 IN-LINE 34 SMALL OUTLINE 88

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Active 5 Contact Manufacturer 7 Obsolete 73 Transferred 100

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No 1

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225 1

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Polarity/Channel Type (1)

N-CHANNEL 179

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150 mW 20 300 mW 27 20 W 5

Min (W) - Max (W)

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Surface Mount (2)

NO 81 YES 100

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