Parametric results for: 2sk3462 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

36.2 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

250 V 3

4 hits Apply

Drain Current-Max (ID) (1)

3 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1.7 Ω 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T3 1 R-PSSO-G2 2

4 hits Apply

e0 1

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 2 3 1

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

IN-LINE 1 SMALL OUTLINE 2

4 hits Apply

End Of Life 2 Lifetime Buy 2

4 hits Apply

No 2

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

20 W 2

4 hits Apply

Surface Mount (2)

NO 1 YES 3

4 hits Apply