Parametric results for: 2sk2885 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

8 hits Apply

Drain Current-Max (ID) (1)

45 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PSIP-T3 1 R-PSSO-G2 4 R-PSSO-G3 1

8 hits Apply

Manufacturer (2)

Hitachi Ltd 4 Renesas Electronics Corporation 4

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

2 4 3 2

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

150.0 °C 4

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

IN-LINE 1 SMALL OUTLINE 5

8 hits Apply

Obsolete 2 Transferred 6

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

75 W 4

8 hits Apply

Surface Mount (2)

NO 2 YES 6

8 hits Apply