Parametric results for: 2sk1950 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

8 hits Apply

Configuration (3)

SINGLE 2 Single 2 SINGLE WITH BUILT-IN DIODE 4

8 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

8 hits Apply

Drain Current-Max (Abs) (ID) (1)

3 A 2

8 hits Apply

Drain Current-Max (ID) (1)

3 A 6

8 hits Apply

Drain-source On Resistance-Max (1)

250 mΩ 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PSIP-T3 3 R-PSSO-G2 3

8 hits Apply

Manufacturer (2)

Hitachi Ltd 4 Renesas Electronics Corporation 4

8 hits Apply

Number of Elements (1)

1 6

8 hits Apply

Number of Terminals (2)

2 3 3 3

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

150.0 °C 6

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

IN-LINE 3 SMALL OUTLINE 3

8 hits Apply

Contact Manufacturer 2 Obsolete 2 Transferred 4

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

10 W 6

8 hits Apply

Surface Mount (2)

NO 4 YES 4

8 hits Apply