Parametric results for: 2sk1335s under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 12

13 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

13 hits Apply

Drain Current-Max (ID) (1)

3 A 12

13 hits Apply

Drain-source On Resistance-Max (1)

800 mΩ 6

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

13 hits Apply

R-PSSO-G2 6

13 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 7

13 hits Apply

Number of Elements (1)

1 12

13 hits Apply

Number of Terminals (1)

2 6

13 hits Apply

ENHANCEMENT MODE 11

13 hits Apply

150.0 °C 8

13 hits Apply

PLASTIC/EPOXY 6

13 hits Apply

RECTANGULAR 6

13 hits Apply

SMALL OUTLINE 6

13 hits Apply

Active 1 Contact Manufacturer 1 Not Recommended 1 Obsolete 6 Transferred 4

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

13 hits Apply

20 W 8

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply