Parametric results for: 2sk1315 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

16 hits Apply

Configuration (3)

SINGLE 10 Single 2 SINGLE WITH BUILT-IN DIODE 3

16 hits Apply

DS Breakdown Voltage-Min (1)

450 V 7

16 hits Apply

Drain Current-Max (Abs) (ID) (1)

8 A 2

16 hits Apply

Drain Current-Max (ID) (1)

8 A 13

16 hits Apply

Drain-source On Resistance-Max (2)

500 mΩ 4 700 mΩ 7

Min (Ω) - Max (Ω)

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

16 hits Apply

R-PSIP-T3 4 R-PSSO-G2 7

16 hits Apply

e0 2 e6 3

16 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 10

16 hits Apply

1 3

16 hits Apply

Number of Elements (1)

1 13

16 hits Apply

Number of Terminals (2)

2 7 3 4

16 hits Apply

ENHANCEMENT MODE 11

16 hits Apply

150.0 °C 8

16 hits Apply

PLASTIC/EPOXY 11

16 hits Apply

RECTANGULAR 11

16 hits Apply

IN-LINE 4 SMALL OUTLINE 7

16 hits Apply

Obsolete 12 Transferred 4

16 hits Apply

No 1 Yes 2

16 hits Apply

245 2 NOT SPECIFIED 1

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

16 hits Apply

60 W 8

16 hits Apply

Surface Mount (2)

NO 4 YES 11

16 hits Apply