Parametric results for: 2sk1215 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (2)

SINGLE 43 Single 3

46 hits Apply

DS Breakdown Voltage-Min (1)

20 V 13

46 hits Apply

Drain Current-Max (Abs) (ID) (1)

30 mA 3

46 hits Apply

Drain Current-Max (ID) (1)

30 mA 43

46 hits Apply

METAL-OXIDE SEMICONDUCTOR 40

46 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 42

46 hits Apply

R-PDSO-G3 45

46 hits Apply

Manufacturer (2)

Hitachi Ltd 22 Renesas Electronics Corporation 24

46 hits Apply

Number of Elements (1)

1 43

46 hits Apply

Number of Terminals (1)

3 45

46 hits Apply

DEPLETION MODE 14 ENHANCEMENT MODE 23

46 hits Apply

150.0 °C 8

46 hits Apply

PLASTIC/EPOXY 45

46 hits Apply

RECTANGULAR 45

46 hits Apply

SMALL OUTLINE 45

46 hits Apply

Active 1 Contact Manufacturer 2 Not Recommended 3 Obsolete 4 Transferred 36

46 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 46

46 hits Apply

100 mW 8

46 hits Apply

Power Gain-Min (Gp) (1)

24.0 dB 36

46 hits Apply

Surface Mount (1)

YES 46

46 hits Apply