Parametric results for: 2sj387s under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

9 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 5

9 hits Apply

DS Breakdown Voltage-Min (1)

20 V 9

9 hits Apply

Drain Current-Max (Abs) (ID) (1)

10 A 1

9 hits Apply

Drain Current-Max (ID) (1)

10 A 9

9 hits Apply

Drain-source On Resistance-Max (2)

100 mΩ 5 110 mΩ 4

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PSSO-G2 9

9 hits Apply

e6 2

9 hits Apply

Manufacturer (2)

Hitachi Ltd 4 Renesas Electronics Corporation 5

9 hits Apply

1 4

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

2 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 4

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

SMALL OUTLINE 9

9 hits Apply

Obsolete 3 Transferred 6

9 hits Apply

Yes 2

9 hits Apply

245 3

9 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 9

9 hits Apply

20 W 4

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply