Parametric results for: 2sj365 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

5 hits Apply

Drain Current-Max (ID) (1)

2 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

450 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSIP-T3 1 R-PSSO-G2 4

5 hits Apply

e0 1

5 hits Apply

Manufacturer (1)

Shindengen Electronic Manufacturing Co Ltd 5

5 hits Apply

2 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (2)

2 4 3 1

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

IN-LINE 1 SMALL OUTLINE 4

5 hits Apply

Obsolete 5

5 hits Apply

240 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

20 W 1

5 hits Apply

20 W 1

5 hits Apply

Surface Mount (2)

NO 1 YES 4

5 hits Apply