Parametric results for: 2sj128z under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

8 hits Apply

DRAIN 6

8 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

8 hits Apply

Drain Current-Max (ID) (1)

2 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

1 Ω 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PSSO-G2 6

8 hits Apply

e0 1

8 hits Apply

Manufacturer (3)

NEC Electronics America Inc 2 NEC Electronics Group 2 Renesas Electronics Corporation 4

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

2 6

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

150.0 °C 7

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

SMALL OUTLINE 6

8 hits Apply

Obsolete 7 Transferred 1

8 hits Apply

Yes 3

8 hits Apply

260 1 NOT SPECIFIED 3

8 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 8

8 hits Apply

20 W 3

8 hits Apply

20 W 4

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply