Filter Your Search
1 - 5 of 5 results
![]() |
2N7002BKVL
Nexperia
|
$0.0859 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 350 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | TO-236 | 3 | SOT23 | compliant | EAR99 | Nexperia | |||||||||
![]() |
2N7002BKV,115
Nexperia
|
$0.1660 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 340 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | FLAT | DUAL | NEXPERIA | SOT | 6 | SOT666 | compliant | EAR99 | Nexperia | ULTRA SMALL, PLASTIC PACKAGE-6 | ||||||||
![]() |
2N7002BKV,115
NXP Semiconductors
|
$0.2067 | Yes | Transferred | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 340 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.14 W | SWITCHING | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | FLAT | DUAL | NXP SEMICONDUCTORS | SOT | 6 | SOT666 | compliant | EAR99 | ULTRA SMALL, PLASTIC PACKAGE-6 | 8541.21.00.75 | |||||||
|
2N7002BKV
Nexperia
|
Check for Price | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 340 mA | 2 Ω | LOGIC LEVEL COMPATIBLE | 4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.14 W | 1.2 A | SWITCHING | SILICON | R-PDSO-F6 | e3 | Not Qualified | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | FLAT | DUAL | NEXPERIA | compliant | EAR99 | Nexperia | ||||||||
|
2N7002BKV
NXP Semiconductors
|
Check for Price | Yes | Transferred | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 340 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-F6 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | 6 | unknown | EAR99 | NXP | ULTRA SMALL, PLASTIC PACKAGE-6 |