Parametric results for: 2n5559 under Other Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 1

3 hits Apply

Collector Current-Max (IC) (1)

10 A 2

3 hits Apply

Collector-Emitter Voltage-Max (1)

120 V 1

3 hits Apply

Configuration (1)

SINGLE 2

3 hits Apply

DC Current Gain-Min (hFE) (1)

12.0 2

3 hits Apply

TO-3 1

3 hits Apply

O-MBFM-P2 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

API Technologies Corp 1 Inchange Semiconductor Company Ltd 1 Silicon Transistor Corporation 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

2 1

3 hits Apply

175.0 °C 2

3 hits Apply

METAL 1

3 hits Apply

ROUND 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 1

3 hits Apply

Polarity/Channel Type (1)

NPN 2

3 hits Apply

100 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply

Transition Frequency-Nom (fT) (2)

800 kHz 1 1 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply