Parametric results for: 2n5245 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 3

32 hits Apply

Configuration (1)

SINGLE 27

32 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

32 hits Apply

JUNCTION 32

32 hits Apply

1 pF 19

32 hits Apply

Highest Frequency Band (2)

ULTRA HIGH FREQUENCY BAND 17 VERY HIGH FREQUENCY BAND 5

32 hits Apply

TO-92 22

32 hits Apply

O-PBCY-T3 19 O-PBCY-W3 7

32 hits Apply

e0 10 e3 2

32 hits Apply

Manufacturer (15)

Central Semiconductor Corp 1 Crimson Semiconductor Inc 1 Fairchild Semiconductor Corporation 2 Freescale Semiconductor 1 Hi-Tron Semiconductor Corp 1 InterFET Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 4 Rochester Electronics LLC 1 Semiconductors Inc 1 Solitron Devices Inc 1 Space Power Electronics Inc 1 Texas Instruments 14

32 hits Apply

Number of Elements (1)

1 30

32 hits Apply

Number of Terminals (1)

3 26

32 hits Apply

DEPLETION MODE 30

32 hits Apply

150.0 °C 12

32 hits Apply

PLASTIC/EPOXY 26

32 hits Apply

ROUND 26

32 hits Apply

CYLINDRICAL 26

32 hits Apply

Active 5 Contact Manufacturer 4 End Of Life 1 Obsolete 22

32 hits Apply

No 3

32 hits Apply

NOT SPECIFIED 2

32 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 32

32 hits Apply

350 mW 2 360 mW 10

Min (W) - Max (W)

32 hits Apply

Power Gain-Min (Gp) (1)

10.0 dB 2

32 hits Apply

Surface Mount (1)

NO 28

32 hits Apply